S9013 transistor (npn) feature z complementary to s9012 z excellent h fe linearity maximum ratings t a =25 unless otherwise noted symbol parameter value units v cbo collector-base voltage 40 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 5 v i c collector current -continuous 500 ma p c collector dissipation 625 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo i c = 100 a , i e =0 40 v collector-emitter breakdown voltage v(br) ceo i c = 1ma , i b =0 25 v emitter-base breakdown voltage v(br) ebo i e = 100 a , i c =0 5 v collector cut-off current i cbo v cb = 40v , i e =0 0.1 a collector cut-off current i ceo v ce =20v , i e =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a h fe(1) v ce =1v, i c =50ma 64 400 dc current gain h fe(2) v ce =1v, i c = 500ma 40 collector-emitter saturation voltage v ce(sat) i c = 500ma, i b = 50ma 0.6 v base-emitter voltage v be(sat) i c = 500ma, i b = 50ma 1.2 v transition frequency f t v ce =6v,i c =20ma,f=30mhz 150 mhz classification of h fe(1) rank d e f g h i j range 64-91 78-112 96-135 112-166 144-202 190-300 300-400 1 2 3 to-92 1. emitter 2. base 3. collector free datasheet http://
typical characteristics S9013 free datasheet http://
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